Study of Electronic Properties of Bismuth- Antimony (Bi1-Xsbx) Nanowire

Author:

Vishwajeet Kumar Chandel 1,K. B. Singh 2,Om Prakash Singh 3

Affiliation:

1. Research Scholar, Department of Physics, J. P. University, Chapra, Bihar, India

2. Department of Physics, L. S. College, Muzaffarpur, B. R. A. Bihar University, Muzaffarpur, Bihar, India

3. Department of Physics, J. P. University, Chapra , Bihar, India

Abstract

In this paper, we presented about the study of the bismuth antimony (Bi1-xSbx) alloys material are considered to be one of the best materials for low temperature thermoelectrics, supercooling, millivolt electronics and infrared applications. A notable number of interesting properties have been observed in bulk bismuth materials, such as non-parabolic dispersions and abnormal magneto-resistance, the ultra-high mobility of carriers, and the high anisotropy. In 1993, Hicks et al. suggested that thermoelectric materials could have enhanced figure of merit if the materials were synthesized in the form of low dimensional systems and nano-systems. Since then, much more focus has been given to bismuth antimony as related to nanoscience and nanotechnology.

Publisher

Technoscience Academy

Subject

General Medicine

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