Low-temperature technique of thin silicon ion implanted epitaxial detectors-Reference-Cited by-同舟云学术

Low-temperature technique of thin silicon ion implanted epitaxial detectors

Published:2015-02 Issue:2 Volume:51 Page:
ISSN:1434-6001
Container-title:The European Physical Journal A
language:en
Short-container-title:Eur. Phys. J. A

Author:

Kordyasz A. J.,Le Neindre N.,Parlog M.,Casini G.,Bougault R.,Poggi G.,Bednarek A.,Kowalczyk M.,Lopez O.,Merrer Y.,Vient E.,Frankland J. D.,Bonnet E.,Chbihi A.,Gruyer D.,Borderie B.,Ademard G.,Edelbruck P.,Rivet M. F.,Salomon F.,Bini M.,Valdré S.,Scarlini E.,Pasquali G.,Pastore G.,Piantelli S.,Stefanini A.,Olmi A.,Barlini S.,Boiano A.,Rosato E.,Meoli A.,Ordine A.,Spadaccini G.,Tortone G.,Vigilante M.,Vanzanella E.,Bruno M.,Serra S.,Morelli L.,Guerzoni M.,Alba R.,Santonocito D.,Maiolino C.,Cinausero M.,Gramegna F.,Marchi T.,Kozik T.,Kulig P.,Twaróg T.,Sosin Z.,Ga̧sior K.,Grzeszczuk A.,Zipper W.,Sarnecki J.,Lipiński D.,Wodzińska H.,Brzozowski A.,Teodorczyk M.,Gajewski M.,Zagojski A.,Krzyżak K.,Tarasiuk K. J.,Khabanowa Z.,Kordyasz Ł.

Publisher

Springer Science and Business Media LLC

Subject

Nuclear and High Energy Physics

Link

http://link.springer.com/content/pdf/10.1140/epja/i2015-15015-2

Reference24 articles.

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