Effects of series and parallel resistances on the C-V characteristics of silicon-based metal oxide semiconductor (MOS) devices-Reference-Cited by-同舟云学术

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Effects of series and parallel resistances on the C-V characteristics of silicon-based metal oxide semiconductor (MOS) devices

Published:2015-04 Issue:4 Volume:130 Page:
ISSN:2190-5444
Container-title:The European Physical Journal Plus
language:en
Short-container-title:Eur. Phys. J. Plus

Author:

Omar Rejaiba,Mohamed Ben Amar,Adel Matoussi

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1140/epjp/i2015-15080-x.pdf

Reference30 articles.

1. H. Chakraborty, D. Misra, Int. J. Sci. Res. Publ. 3, 1 (2013).

2. Yu.A. Chaplygin, E.A. Artamonova, A.Yu. Krasyukov, TYu. Krupkina, Semiconductors 42, 1522 (2008).

3. F.M. d'Heurle, M.O. Aboelfotoh, F. Pesavento, C.S. Petersson, Appl. Surf. Sci. 53, 237 (1991).

4. E.H. Nicollian, J.R. Brews, MOS Physics and Technology (Willey Interscience Publication, USA, 1982).

5. U. Kelberlau, R. Kassinc, Solid-State Electronic 37, 22 (1978).

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