Hall effect and negative magnetoresistance in thin crystals of NbSe3-Reference-Cited by-同舟云学术

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Hall effect and negative magnetoresistance in thin crystals of NbSe3

Published:2008-05 Issue:2 Volume:63 Page:199-204
ISSN:1434-6028
Container-title:The European Physical Journal B
language:en
Short-container-title:Eur. Phys. J. B

Author:

Sinchenko A. A.,Latyshev Yu. I.,Orlov A. P.,Ivanov A. A.,Monceau P.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1140/epjb/e2008-00235-5.pdf

Reference28 articles.

1. P. Monceau, N.P. Ong, A.M. Portis, A. Merschaut, J. Rouxel, Phys. Rev. Lett. 37, 602 (1976)

2. J.A. Wilson, Phys. Rev. B 19, 6456 (1979)

3. R.V. Coleman, M.P. Everson, Hao-An Lu, A. Johnson, L.M. Falicov, Phys. Rev. B 41, 460 (1990)

4. R.V. Coleman, G. Eiserman, M.P. Everson, A. Johnson, L.M. Falicov, Phys. Rev. Lett. 55, 863 (1985)

5. J. Richard, P. Monceau, M. Renard, Phys. Rev. B 35, 4533 (1987)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Distinctive features of the charge density wave collective motion driven by Hall electric field in NbSe3;Applied Physics Letters;2021-05-24

2. Charge density wave sliding driven by an interplay of conventional and Hall voltages in NbSe3 microbridges;Physical Review B;2019-12-16

3. Hall effect in the pinned and sliding charge density wave state of NbSe3;Journal of Physics: Condensed Matter;2009-10-05

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