2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties-Reference-Cited by-同舟云学术

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2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties

Published:2020-02 Issue:2 Volume:93 Page:
ISSN:1434-6028
Container-title:The European Physical Journal B
language:en
Short-container-title:Eur. Phys. J. B

Author:

Fatahi Negin,Hoat D. M.,Laref Amel,Amirian Shorin,Reshak A. H.,Naseri Mosayeb

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1140/epjb/e2020-100543-6.pdf

Reference44 articles.

1. B. Smiri, I. Fraj, M. Bouzidi, F. Saidi, A. Rebey, H. Maaref, Results Phys. 12, 2175 (2019)

2. D. Chen, G. Zhang, Z. Cheng, S. Dong, Y. Wang, IUCrJ 6, 189 (2019)

3. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Science 306, 5696 (2004)

4. A.K. Geim, K.S. Novoselov, Nat. Mater. 6, 183 (2007)

5. X. Zhang, Y. Xie, Chem. Soc. Rev. 42, 8187 (2013)

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