Optical method for calculating the dopant concentration of doped amorphous semiconductors-Reference-Cited by-同舟云学术

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Optical method for calculating the dopant concentration of doped amorphous semiconductors

Published:2022-07 Issue:7 Volume:137 Page:
ISSN:2190-5444
Container-title:The European Physical Journal Plus
language:en
Short-container-title:Eur. Phys. J. Plus

Author:

Li Zhenfei^ORCID,Zhang Liping,Liu Wenzhu,Yu Youlin,Huang Shenglei,Li Xiaodong,Yang Yuhao,Jiang Kai,Meng Fanying,Liu Zhengxin

Funder

Innovative Research Group Project of the National Natural Science Foundation of China

Strategic Priority Research Program and the joint fund of Chinese Academy of Sciences

Science and Technology Commission of Shanghai Municipality

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,Fluid Flow and Transfer Processes

Link

https://link.springer.com/content/pdf/10.1140/epjp/s13360-022-03027-5.pdf

Reference30 articles.

1. N.F. Mott, Electrons in disordered structures. Adv. Phys.-X 16(61), 49–144 (1967). https://doi.org/10.1080/00018736700101265

2. R.A. Street, Doping and the Fermi energy in amorphous silicon. Phys. Rev. L 49(16), 1187 (1982). https://doi.org/10.1103/PhysRevLett.49.1187

3. W. Beyer, W. Hilgers, P. Prunici, D. Lennartz, Voids in hydrogenated amorphous silicon materials. J. Non-Cryst. Solids 358(17), 2023–2026 (2012). https://doi.org/10.1016/j.jnoncrysol.2011.09.030

4. M.H. Brodsky, R.S. Title, K. Weiser, G.D. Pettit, Structural, optical, and electrical properties of amorphous silicon films. Phys. Rev. B 1, 2632 (1970). https://doi.org/10.1103/PhysRevB.1.2632

5. S.G. Greenbaum, W.E. Carlos, P.C. Taylor, Local bonding arrangements of boron in doped hydrogenated amorphous silicon. J. Appl. Phys. 56(6), 1874–1877 (1984). https://doi.org/10.1063/1.334203

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