Computational investigation of structural, magnetic, elastic, and electronic properties of Half-Heusler ScVX (X = Si, Ge, Sn, and Pb) compounds-Reference-Cited by-同舟云学术

Computational investigation of structural, magnetic, elastic, and electronic properties of Half-Heusler ScVX (X = Si, Ge, Sn, and Pb) compounds

Published:2021-11 Issue:11 Volume:136 Page:
ISSN:2190-5444
Container-title:The European Physical Journal Plus
language:en
Short-container-title:Eur. Phys. J. Plus

Author:

Abdullah Abdullah,Husain Mudasser,Rahman Nasir^ORCID,Khan Rajwali,Iqbal Zaffar,Zulfiqar Syed,Sohail Mohammad,Umer Muhammad,Murtaza Ghulam,Khan Saima Naz,Khan Aurangzeb,Reshak Ali. H.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

https://link.springer.com/content/pdf/10.1140/epjp/s13360-021-02175-4.pdf

Reference28 articles.

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2. H. Xie et al., Beneficial contribution of alloy disorder to electron and phonon transport in half-heusler thermoelectric materials. Adv. Funct. Mater. 23(41), 5123–5130 (2013)

3. N. Rahman et al., First principle study of structural, electronic, elastic, and magnetic properties of half-heusler compounds ScTiX (X= Si, Ge, Pb, In, Sb, and Tl). J. Supercond. Nov. Magn. 33(12), 3915–3922 (2020)

4. J.-W.G. Bos, R.A. Downie, Half-Heusler thermoelectrics: a complex class of materials. J. Phys. Condens. Matter. 26(43), 433201 (2014)

5. F. Casper, T. Graf, S. Chadov, B. Balke, C. Felser, Half-Heusler compounds: novel materials for energy and spintronic applications. Semicond. Sci. Technol. 27(6), 63001 (2012)

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