Beam steering with quasi-mosaic bent silicon single crystals: computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments-Reference-Cited by-同舟云学术

Beam steering with quasi-mosaic bent silicon single crystals: computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments

Published:2022-08 Issue:8 Volume:76 Page:
ISSN:1434-6060
Container-title:The European Physical Journal D
language:en
Short-container-title:Eur. Phys. J. D

Author:

Backe H.^ORCID

Abstract

AbstractMonte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which affect the volume-deflection and volume-capture characteristics. To these belongs the angular alignment of the crystal with respect to the nominal beam direction. The continuum potential picture has been utilized. The simulation results were compared with experiments. It turns out that the assumption of an anticlastic bending of the crystal, bent on the principle of the quasi-mosaic effect, is not required to reproduce the gross features of the experimental observations for two examined examples.Graphical abstract

Funder

Johannes Gutenberg-Universität Mainz

Publisher

Springer Science and Business Media LLC

Subject

Atomic and Molecular Physics, and Optics

Link

https://link.springer.com/content/pdf/10.1140/epjd/s10053-022-00463-x.pdf

Reference22 articles.

1. A.V. Korol, A.V. Solov’yov, Greiner, W. Channeling and Radiation in Periodically Bent Crystals, 2nd Edn. Springer, Springer-Verlag, Berlin Heidelberg 2014, Springer Series on Atomic. Opt. Plasma Phys. 69, 2014 (2014)

2. R. Camattari, V. Guidi, V. Bellucci, A. Mazzolari, The ‘quasi-mosaic’ effect in crystals and its applications in modern physics. J. Appl. Crystallogr. 48, 977–989 (2015). https://doi.org/10.1107/S1600576715009875

3. A. Mazzolari, E. Bagli, L. Bandiera, V. Guidi, H. Backe, W. Lauth, V. Tikhomirov, A. Berra, D. Lietti, M. Prest, E. Vallazza, D. De Salvador, Steering of a sub-gev electron beam through planar channeling enhanced by rechanneling. Phys. Rev. Lett. 112, 135503 (2014). https://doi.org/10.1103/PhysRevLett.112.135503

4. U. Wienands, T.W. Markiewicz, J. Nelson, R.J. Noble, J.L. Turner, U.I. Uggerhøj, T.N. Wistisen, E. Bagli, L. Bandiera, G. Germogli, V. Guidi, A. Mazzolari, R. Holtzapple, M. Miller, Observation of deflection of a beam of multi-gev electrons by a thin crystal. Phys. Rev. Lett. 114, 074801–6 (2015). https://doi.org/10.1103/PhysRevLett.114.074801

5. T.N. Wistisen, U.I. Uggerhøj, U. Wienands, T.W. Markiewicz, R.J. Noble, B.C. Benson, T. Smith, E. Bagli, L. Bandiera, G. Germogli, V. Guidi, A. Mazzolari, R. Holtzapple, S. Tucker, Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal. Phys. Rev. Accelerat. Beams 19, 071001–11 (2016). https://doi.org/10.1103/PhysRevAccelBeams.19.071001

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