Abstract
In two new single n+(p+)−p(n) X(x)-alloy junction solar cells at 300 K, [X(x)≡CdTe1−xSx, CdTe1−xSex],0≤x≤1, by basing on the same physical model-and-treatment method, as used in our recent works [1, 2], and also other works [3-11], some important results, obtained in the present work, are reported in the following.As noted in Tables 2.1, 3.1, 4.1 and 5.1, the dark carrier-minority saturation current density
Reference11 articles.
1. H. Van Cong, “(26.55%, or 23.69%)- Limiting Highest Efficiencies, Obtained Respectively in n+(p+)−p(n) Crystalline (X=CdTe, or CdSe)-Junction Solar Cells at 300 K, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion,” Eur. J. Theor. Appl. Sci., vol. 1(5), pp. 249-268, 2023. DOI: 10.59324/ejtas.2023.1(5).128
2. H. Van Cong, “(14.82%, 12.16%, 26.55%, or 23.69%)- Limiting Highest Efficiencies obtained in n+(p+)−p(n) Crystalline (X≡Ge,GaSb,CdTe,or CdSe)-Junction Solar Cells, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion,” SCIREA J. Phys., vol. 8, pp. 575-595, 2023.
3. H. Van Cong, and G. Debiais, “ A simple accurate expression of the reduced Fermi energy for any reduced carrier density,” J. Appl. Phys., vol. 73, pp. 1545-15463, 1993. DOI: 10.1063/1.353232
4. H. Van Cong, and B. Doan Khanh, “Simple accurate general expression of the Fermi-Dirac integral Fj(a) and for j> -1,” Solid-State Electron., vol. 35, pp. 949-951, 1992.
5. H. Van Cong, “New series representation of Fermi-Dirac integral Fj(−∞ -1, and its effect on Fj(a≥0+) for integer j≥0,” Solid-State Electron., vol. 34, pp. 489-492, 1991.