Deep purification of tellurium, zinc and cadmium for use in electronic devices-Reference-Cited by-同舟云学术

Deep purification of tellurium, zinc and cadmium for use in electronic devices

Published:2022-06-17 Issue:2 Volume:25 Page:164-174
ISSN:2413-6387
Container-title:Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
language:
Short-container-title:Izv. vysš. učebn. zaved., Mater. èlektron. teh.

Author:

Abryutin V. N.¹^ORCID,Davydova E. V.¹^ORCID,Egorov M. A.¹^ORCID,Maronchuk I. I.¹^ORCID,Sanikovich D. D.¹^ORCID

Affiliation:

1. ADV-Engineering, LLC

Abstract

A combined method of profound purification of Cd, Zn and Te developed by the Authors and allowing one to produce high-purity materials in a vertical reactor unit has been considered. The method includes the following processes: filtration refinement of metal alloy with the possibility of its vacuum degassing and additional purification through an oxide layer; first distillation with the possibility to use gettering additions in the melt and gettering filters; melt degassing with the removal of highly volatile impurities to the condenser in rough vacuum; second distillation and metal casting for weighed quantities. The Authors have developed and produced a test model of the unit for the experimental profound purification of metals using the method developed herein. Physical experiments have been conducted for obtaining 99,9999 wt.% purity Cd, Zn and Te for 30 residual impurities with a product yield of at least 55%.

Publisher

National University of Science and Technology MISiS

Subject

General Medicine

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