Temperature studies of Hall field sensors based on nanosized silicon-on-insulator heterostructures

Abstract

Microelectronics is one of the industries that have been developing at a record pace in recentdecades. The most important role in the development of the digital economy is played by the development and organization of the production of a new generation of microelectronic sensors of external influences and microsystems based on them. Due to the need to operate such devices under various conditions, including wide temperature ranges, determining the ranges of their reliable operation is an urgent task. Thermal studies are carried out using the previously constructed two-level mathematical model of a Hall field sensor (HFS) based on a silicon-on-insulator (SOI) heterostructure. The results of computational and experimental studies of the influence of temperature on the characteristics of the SOI HFS are presented. The possibility of operation of the sensor in a wide temperature range is shown. Parametric identification of the mathematical model developed by the authors based on the experimental data is carried out. The sensitivity function of the electric current to temperature change is determined. The proposed approach makes it possible to estimate the required sensitivity of the sensor to determine the temperature with the given accuracy.