Impact of nanosecond UV laser pulses on the surface of germanium single crystals

Abstract

For the first time, a detailed comprehensive study of the "dry" etching of dislocation and dislocation-free germanium samples on the {111}, {110} and {100} planes has been carried out. Etching was carried out by exposure to pulses of nanosecond UV laser radiation of subthreshold intensity (wavelength 355 nm, duration ~ 10 ns, energy density ~ 0.5–1.3 J/cm2, pulse repetition rate 100 Hz, divergence 1–2 mrad). Before and after laser heat treatment of the surface, the samples were examined using a Zygo optical profilometer and a scanning electron microscope. Features of the nature of damage to surfaces corresponding to different crystallographic planes of single crystals of industrial dislocation germanium are revealed. They are compared with data on subthreshold damages of typical dislocation-free crystals.It is shown that in dislocation samples of germanium on the {111} plane, it is possible to create a regime of exposure to radiation, leading to the formation of etch pits that are outwardly identical to dislocation pits detected during selective chemical etching. Their concentration corresponds in order of magnitude to the density of dislocations.On the {100} plane of dislocation samples, etching results were also found, which clearly have a crystallographic nature. At an energy density of the acting radiation ≥ 0.4 J/cm2, on the surfaces of dislocation ({100} plane) and dislocation-free germanium ({111}, {100}, {110} planes), only individual spots ~ 50 μm in size were registered, as well as individual microcraters ~ 0.1–1 μm in size, which do not have crystallographic features. The possibility of environmentally friendly detection of dislocations in germanium without the use of chemical reagents is shown.