Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond-Reference-Cited by-同舟云学术

Laser vibrational excitation of radicals to prevent crystallinity degradation caused by boron doping in diamond

Published:2021-01-22 Issue:4 Volume:7 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Fan L.¹^ORCID,Constantin L.¹²^ORCID,Wu Z. P.¹^ORCID,McElveen K. A.³,Chen X. G.⁴,He T.⁵^ORCID,Wang F.⁶^ORCID,Debiemme-Chouvy C.⁷^ORCID,Cui B.⁶,Lai R. Y.³^ORCID,Li X.⁵^ORCID,Silvain J. F.²^ORCID,Lu Y. F.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.

2. The French National Centre for Scientific Research, CNRS, University of Bordeaux, Bordeaux INP, ICMCB UMR 5026, F-33608 Pessac, France.

3. Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.

4. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.

5. Department of Civil and Environmental Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.

6. Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.

7. Laboratoire Interfaces et Systémes Electrochimiques, UMR 8235, CNRS, Sorbonne Université, F-75252 Paris Cedex, France.

Abstract

An active, “microscopic,” laser-enabled control of energy coupling channel produces highly conductive and crystalline diamond.

Funder

National Science Foundation

Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference40 articles.

1. Doping Limits of Grown insitu Doped Silicon Nanowires Using Phosphine

2. Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1−xSnxepitaxial layer

3. Plasma‐enhanced chemical vapor deposition ofinsitudoped epitaxial silicon at low temperatures. II. Boron doping

4. Boron doped diamond deposited by microwave plasma-assisted CVD at low and high pressures

5. Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Nitriding of 38CrMoAl Steels with Laser Vibrational Excitation of Ammonia;Metallurgical and Materials Transactions A;2024-06-25

2. A review of diamond synthesis, modification technology, and cutting tool application in ultra-precision machining;Materials & Design;2024-01

3. BiVO4/boron-doped diamond heterojunction photoanode with boron doping engineering and enhanced photoelectrocatalytic activity;Diamond and Related Materials;2023-10

4. Ultrafast short-range catalytic pathway modified peroxymonosulfate activation over CuO with surface oxygen defects for tetracycline hydrochloride degradation;Environmental Research;2023-04

5. Natural Exponential and Three‐Dimensional Chaotic System;Advanced Science;2023-03-28