Defect dipole stretching enables ultrahigh electrostrain

Author:

Tian Shuo1ORCID,Wang Binquan2,Li Bin1ORCID,Guo Yiping2ORCID,Zhang Shujun3ORCID,Dai Yejing1ORCID

Affiliation:

1. School of Materials, Sun Yat-sen University, Shenzhen 518107, P. R. China.

2. State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China.

3. Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Wollongong, NSW 2500, Australia.

Abstract

Piezoelectric actuators have been extensively utilized as micro-displacement devices because of their advantages of large output displacement, high sensitivity, and immunity to electromagnetic interference. Here, we propose a straightforward approach to design <110>-oriented defect dipoles by introducing A-site vacancies and oxygen vacancies in (K 0.48 Na 0.52 ) 0.99 NbO 2.995 ceramics. As a result, we achieve ultrahigh electrostrains of 0.7% at 20 kV cm −1 (with an effective piezoelectric strain coefficient d 33 * = 3500 pm V −1 ), outperforming the performance of existing piezoelectric ceramics at the same driving field. The exceptional electrostrain is primarily attributed to the large stretching of defect dipoles when subjected to an applied electric field, a phenomenon that has been experimentally confirmed. Moreover, the strong interaction between these defect dipoles and <110> spontaneous polarizations plays a critical role in minimizing hysteresis and ensuring excellent fatigue resistance. Our findings present a practical and effective strategy for developing high-performance piezoelectric materials tailored for advanced actuator applications.

Publisher

American Association for the Advancement of Science (AAAS)

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