In situ manipulation and switching of dislocations in bilayer graphene-Reference-Cited by-同舟云学术

In situ manipulation and switching of dislocations in bilayer graphene

Published:2018-08-03 Issue:8 Volume:4 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Schweizer Peter¹^ORCID,Dolle Christian¹^ORCID,Spiecker Erdmann¹

Affiliation:

1. Institute of Micro- and Nanostructure Research and Center for Nanoanalysis and Electron Microscopy, Friedrich-Alexander University Erlangen-Nürnberg, Erlangen, Germany.

Abstract

A materials scientist’s dream come true: manipulating and controlling individual dislocations in situ.

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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4. The electrical properties of dislocations in silicon—I: The effects on carrier lifetime;Glaenzer R. H.;Solid-State Electron.,1969

5. Ultrahigh Strength and High Electrical Conductivity in Copper

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