Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor-Reference-Cited by-同舟云学术

Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor

Published:2019-07-05 Issue:7 Volume:5 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Qiu Zhizhan¹²^ORCID,Trushin Maxim³,Fang Hanyan¹^ORCID,Verzhbitskiy Ivan³⁴^ORCID,Gao Shiyuan⁵,Laksono Evan³⁴,Yang Ming⁶,Lyu Pin¹,Li Jing¹^ORCID,Su Jie¹³,Telychko Mykola¹³,Watanabe Kenji⁷^ORCID,Taniguchi Takashi⁷,Wu Jishan¹^ORCID,Neto A. H. Castro³⁴^ORCID,Yang Li⁵^ORCID,Eda Goki¹³⁴^ORCID,Adam Shaffique³⁴⁸^ORCID,Lu Jiong¹³^ORCID

Affiliation:

1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.

2. NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore 117456, Singapore.

3. Centre for Advanced 2D Materials (CA2DM), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore.

4. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore.

5. Department of Physics, Washington University in St. Louis, St. Louis, MO 63130, USA.

6. Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore.

7. National Institute of Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

8. Yale-NUS College, 16 College Avenue West, Singapore 138527, Singapore.

Abstract

Remote control of excitons in a two-dimensional semiconductor is achieved by tuning electron density in adjacent graphene.

Funder

Air Force Office of Scientific Research

National University of Singapore Young Investigator Award

MOE tier2 grants

MOE Tier 2 grants

NRF Medium Sized Centre Programme

the Singapore Ministry of Education AcRF Tier2

Publisher