Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device-Reference-Cited by-同舟云学术

Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device

Published:2019-05-03 Issue:5 Volume:5 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Kawasugi Yoshitaka¹^ORCID,Seki Kazuhiro¹²³,Tajima Satoshi⁴^ORCID,Pu Jiang⁵,Takenobu Taishi⁵,Yunoki Seiji¹³⁶,Yamamoto Hiroshi M.¹⁷^ORCID,Kato Reizo¹^ORCID

Affiliation:

1. RIKEN, Wako, Saitama 351-0198, Japan.

2. SISSA–International School for Advanced Studies, Via Bonomea 265, 34136 Trieste, Italy.

3. RIKEN Center for Computational Science (R-CCS), Kobe, Hyogo 650-0047, Japan.

4. Department of Physics, Toho University, Funabashi, Chiba 274-8510, Japan.

5. Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.

6. RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan.

7. Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki, Aichi 444-8585, Japan.

Abstract

Simultaneous control of bandfilling and bandwidth reveals the two-dimensional ground-state phase diagram of a Mott transistor.

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science, and Technology

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference50 articles.

1. Doping a Mott insulator: Physics of high-temperature superconductivity

2. Unconventional superconductivity in magic-angle graphene superlattices