Centimeter-scale hole diffusion and its application in organic light-emitting diodes

Author:

Liu Shihao12ORCID,Zhang Jiaming1ORCID,Zang Chunxiu1,Zhang Letian1,Xie Wenfa1ORCID,Lee Chun-Sing2ORCID

Affiliation:

1. State key Laboratory of Integrated Optoelectronics, College of Electronics Science and Engineering, Jilin University, Changchun 130012, People’s Republic of China.

2. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Chemistry, City University of Hong Kong, Hong Kong SAR 999077, People’s Republic of China.

Abstract

In conventional organic light-emitting diodes (OLEDs), current balance between electron and hole transport regions is typically achieved by leakage of the major carrier through the devices or by accumulation of the major carrier inside the devices. Both of these are known to reduce performances leading to reduction of efficiency and operation stability due to exciton-polaron annihilation, etc. We found that hole diffusion in a centimeter-scale can be achieved in a PEDOT:PSS layer via composition and interface engineering. This ultralong distance hole diffusion enables substantially enhanced hole diffusion current in the lateral direction perpendicular to the applied electric field in typical organic optoelectronic devices. By introducing this lateral hole diffusion layer (LHDL) at the anode side of OLEDs, reduced carrier accumulation, improved efficiency, and enhanced operation stability are demonstrated. The application of the LHDL provides a third strategy for current balancing with much reduced harmful effects from the previous two approaches.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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