Oxide-mediated recovery of field-effect mobility in plasma-treated MoS 2-Reference-Cited by-同舟云学术

Oxide-mediated recovery of field-effect mobility in plasma-treated MoS 2

Published:2018-03-02 Issue:3 Volume:4 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Jadwiszczak Jakub¹²³^ORCID,O’Callaghan Colin¹²³^ORCID,Zhou Yangbo¹²³⁴,Fox Daniel S.¹²³^ORCID,Weitz Eamonn¹,Keane Darragh²³⁵^ORCID,Cullen Conor P.²³⁵,O’Reilly Ian¹^ORCID,Downing Clive²³,Shmeliov Aleksey²³⁵,Maguire Pierce¹²³^ORCID,Gough John J.¹²^ORCID,McGuinness Cormac¹²^ORCID,Ferreira Mauro S.¹²³^ORCID,Bradley A. Louise¹²^ORCID,Boland John J.²³⁵^ORCID,Duesberg Georg S.²³⁵⁶^ORCID,Nicolosi Valeria²³⁵^ORCID,Zhang Hongzhou¹²³^ORCID

Affiliation:

1. School of Physics, Trinity College Dublin, Dublin 2, Ireland.

2. Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin, Dublin 2, Ireland.

3. Advanced Materials and BioEngineering Research Centre, Trinity College Dublin, Dublin 2, Ireland.

4. School of Materials Science and Engineering, Nanchang University, 999 Xuefu Road, Nanchang, Jiangxi 330031, China.

5. School of Chemistry, Trinity College Dublin, Dublin 2, Ireland.

6. Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany.

Abstract

Time-controlled plasma treatment of MoS 2 FETs improves carrier transport due to the presence of a two-dimensional oxide phase.

Funder

Irish Research Council for Science, Engineering and Technology

Science Foundation Ireland

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference61 articles.

1. Single-layer MoS2 transistors

2. Mobility engineering and a metal–insulator transition in monolayer MoS2;Radisavljevic B.;Nat. Mater.,2013