A high-spin ground-state donor-acceptor conjugated polymer

Author:

London A. E.1ORCID,Chen H.2,Sabuj M. A.3ORCID,Tropp J.1ORCID,Saghayezhian M.4ORCID,Eedugurala N.1ORCID,Zhang B. A.1ORCID,Liu Y.5ORCID,Gu X.1ORCID,Wong B. M.6ORCID,Rai N.3ORCID,Bowman M. K.2ORCID,Azoulay J. D.1ORCID

Affiliation:

1. Center for Optoelectronic Materials and Devices, School of Polymer Science and Engineering, The University of Southern Mississippi, Hattiesburg, MS 39406, USA.

2. Department of Chemistry & Biochemistry, The University of Alabama, Tuscaloosa, AL 35487-0336, USA.

3. Dave C. Swalm School of Chemical Engineering and Center for Advanced Vehicular Systems, Mississippi State University, Mississippi State, MS 39762, USA.

4. Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, USA.

5. Molecular Foundry, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, CA 94720, USA.

6. Department of Chemical and Environmental Engineering and Materials Science and Engineering Program, University of California, Riverside, Riverside, CA 92521, USA.

Abstract

A conjugated polymer semiconductor was synthesized, which exhibits a high-spin ground state and robust stability.

Funder

National Science Foundation

Office of Naval Research

Air Force Office of Scientific Research

U.S. Department of Energy

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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