Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering-Reference-Cited by-同舟云学术

Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Published:2022-02-04 Issue:5 Volume:8 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Mundy Julia A.¹²^ORCID,Grosso Bastien F.³^ORCID,Heikes Colin A.⁴^ORCID,Ferenc Segedin Dan²⁵,Wang Zhe⁶,Shao Yu-Tsun⁶,Dai Cheng⁷,Goodge Berit H.⁶⁸^ORCID,Meier Quintin N.³^ORCID,Nelson Christopher T.⁹,Prasad Bhagwati¹,Xue Fei⁷,Ganschow Steffen¹⁰^ORCID,Muller David A.⁶⁸^ORCID,Kourkoutis Lena F.⁶⁸^ORCID,Chen Long-Qing⁷^ORCID,Ratcliff William D.⁴¹¹^ORCID,Spaldin Nicola A.³^ORCID,Ramesh Ramamoorthy¹⁵¹²^ORCID,Schlom Darrell G.⁸¹⁰¹³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA.

2. Department of Physics, Harvard University, Cambridge, MA 02138, USA.

3. Department of Materials, ETH Zürich, Zürich CH-8093, Switzerland.

4. NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20878, USA.

5. Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA.

6. School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.

7. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.

8. Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA.

9. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA.

10. Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany.

11. Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA.

12. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

13. Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA.

Abstract

Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. By confining thin layers of BiFeO3in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference95 articles.

1. Elastic strain engineering of ferroic oxides

2. Electrostatic Coupling and Local Structural Distortions at Interfaces in Ferroelectric/Paraelectric Superlattices

3. Observation of room-temperature polar skyrmions

4. Theory of Antiferroelectric Crystals

5. Antiferroelectric-Ferroelectric Switching in a Simple “Kittel” Antiferroelectric

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact Physical Model for Ferroelectric/Antiferroelectric/Dielectric Mixed Phase Capacitors;IEEE Electron Device Letters;2024-02

2. Superior Energy Storage Performance in Antiferroelectric Epitaxial Thin Films via Structural Heterogeneity and Orientation Control;Advanced Functional Materials;2023-10-19

3. Phonon entropy engineering for caloric cooling;Applied Physics Reviews;2023-08-15

4. Phase Coexistence in Multiferroic BiFeO3 Nano-needles Driven by Surface Boundary Conditions.;Microscopy and Microanalysis;2023-07-22

5. Topological phases in polar oxide nanostructures;Reviews of Modern Physics;2023-04-20