Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers-Reference-Cited by-同舟云学术

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers

Published:2024-04-05 Issue:14 Volume:10 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Sun Weideng¹²^ORCID,Zhang Yike¹²^ORCID,Cao Kaihua³,Lu Shiyang³,Du Ao³,Huang Haoliang⁴⁵^ORCID,Zhang Sen⁶^ORCID,Hu Chaoqun⁷⁸,Feng Ce¹²^ORCID,Liang Wenhui¹²^ORCID,Liu Quan¹²^ORCID,Mi Shu¹²,Cai Jianwang⁷⁸^ORCID,Lu Yalin⁴^ORCID,Zhao Weisheng³^ORCID,Zhao Yonggang¹²^ORCID

Affiliation:

1. Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China.

2. Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China.

3. Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China.

4. Anhui Laboratory of Advanced Photon Science and Technology and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China.

5. Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.

6. College of Science, National University of Defense Technology, Changsha 410073, China.

7. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

8. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.

Abstract

Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non–in-plane magnetic anisotropy.

Publisher

American Association for the Advancement of Science (AAAS)

Link

https://www.science.org/doi/pdf/10.1126/sciadv.adj8379

Reference75 articles.

1. Magnetoresistive random access memory using magnetic tunnel junctions

2. The emergence of spin electronics in data storage

3. B. Dieny I. L. Prejbeanu Magnetic random-access memory in Introduction to Magnetic Random-Access Memory B. Dieny R. B. Goldfarb K. J. Lee Eds. (Wiley 2017) chap. 5.

4. Toward a Universal Memory

5. Current-induced torques in magnetic materials

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