Femtosecond visualization of oxygen vacancies in metal oxides-Reference-Cited by-同舟云学术

Femtosecond visualization of oxygen vacancies in metal oxides

Published:2020-03-06 Issue:10 Volume:6 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Zhang Xinping¹^ORCID,Tang Fawei²,Wang Meng¹,Zhan Wangbin²,Hu Huaxin²,Li Yurong²,Friend Richard H.³^ORCID,Song Xiaoyan²^ORCID

Affiliation:

1. Institute of Information Photonics Technology and College of Applied Sciences, Beijing University of Technology, Beijing 100124, China.

2. College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing 100124, China.

3. Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK.

Abstract

Femtosecond spectroscopy combined with first-principle calculations enables determination of oxygen-vacancy configuration.

Funder

National Natural Science Foundation of China

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference39 articles.

1. Enhancement of the dielectric constant of Ta2O5through substitution with TiO2

2. Unexpected magnetism in a dielectric oxide

3. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

4. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

5. Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide

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