Spin homojunction with high interfacial transparency for efficient spin-charge conversion

Author:

Han Lei1ORCID,Wang Yuyan2ORCID,Zhu Wenxuan1,Zhao Runni3ORCID,Chen Xianzhe1ORCID,Su Rongxuan1,Zhou Yongjian1,Bai Hua1,Wang Qian1,You Yunfeng1,Chen Chong1,Yan Sen3,Chen Tongjin1ORCID,Wen Yongzheng3,Song Cheng1ORCID,Pan Feng1ORCID

Affiliation:

1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China.

2. Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing 100084, P. R. China.

3. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China.

Abstract

High interfacial transparency is vital to achieve efficient spin-charge conversion for ideal spintronic devices with low energy consumption. However, in traditional ferromagnetic/nonmagnetic heterojunctions, the interfacial Rashba spin-orbit coupling brings about spin memory loss (SML) and two-magnon scattering (TMS), quenching spin current crossing the heterointerfaces. To address the intrinsic deficiency of heterointerface, we design a ferromagnetic FeRh/antiferromagnetic FeRh spin homojunction for efficient spin-charge conversion, verified by a high interfacial transparency of 0.75 and a high spin torque efficiency of 0.34 from spin pumping measurements. First-principles calculations demonstrate that the interfacial electric field of homojunction is two orders of magnitude smaller than that of traditional heterojunction, producing negligible interfacial spin-orbit coupling to drastically reduce SML and TMS. Our spin homojunction exhibits potential and enlightenment for future energy-efficient spintronic devices.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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