Ultranarrow-bandgap small-molecule acceptor enables sensitive SWIR detection and dynamic upconversion imaging

Author:

Chen Yongjie1ORCID,Zheng Yingqi12,Wang Jing3,Zhao Xuan4,Liu Guanhao25,Lin Yi6ORCID,Yang Yubo4ORCID,Wang Lixiang3,Tang Zheng6ORCID,Wang Ying5ORCID,Fang Yanjun3ORCID,Zhang Wenkai4ORCID,Zhu Xiaozhang12ORCID

Affiliation:

1. Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Haidian District, Beijing, China.

2. School of Chemical Sciences, University of Chinese Academy of Sciences, Haidian District, Beijing, China.

3. State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.

4. Department of Physics and Applied Optics Beijing Area Major Laboratory, Center for Advanced Quantum Studies, Beijing Normal University, Beijing, China.

5. Key Laboratory of Photochemical Conversion and Optoelectronic Materials and CityU−CAS Joint Laboratory of Functional Materials and Devices, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China.

6. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Center for Advanced Low-dimension Materials, College of Materials Science and Engineering, Donghua University, Shanghai, China.

Abstract

Short-wavelength infrared (SWIR) light detection plays a key role in modern technologies. Emerging solution-processed organic semiconductors are promising for cost-effective, flexible, and large-area SWIR organic photodiodes (OPDs). However, the spectral responsivity ( R ) and specific detectivity ( D *) of SWIR OPDs are restricted by insufficient exciton dissociation and high noise current. In this work, we synthesized an SWIR small molecule with a spectral coverage of 0.3 to 1.3 micrometers peaking at 1100 nanometers. The photodiode, with optimized exciton dissociation, charge injection, and SWIR transmittance, achieves a record high R of 0.53 ampere per watt and D * of 1.71 × 10 13 Jones at 1110 nanometers under zero bias. The D * at 1 to 1.2 micrometers surpasses that of the uncooled commercial InGaAs photodiode. Furthermore, large-area semitransparent all-organic upconversion devices integrating the SWIR photodiode realized static and dynamic SWIR-to-visible imaging, along with excellent upconversion efficiency and spatial resolution. This work provides alternative insights for developing sensitive organic SWIR detection.

Publisher

American Association for the Advancement of Science (AAAS)

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