Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride

Author:

Zhou Jingcheng1ORCID,Lu Hanyi2,Chen Di34,Huang Mengqi1,Yan Gerald Q.2,Al-matouq Faris1,Chang Jiu1,Djugba Dziga1ORCID,Jiang Zhigang1ORCID,Wang Hailong1ORCID,Du Chunhui Rita12ORCID

Affiliation:

1. School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA.

2. Department of Physics, University of California, San Diego, La Jolla, CA 92093, USA.

3. Department of Physics, University of Houston, Houston, TX 77204, USA.

4. Texas Center for Superconductivity, University of Houston, Houston, TX 77204, USA.

Abstract

Optically active spin defects in wide bandgap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of “hard” and “soft” condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y 3 Fe 5 O 12 (YIG) by boron vacancy V B spin defects contained in few-layer-thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by V B spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and V B spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.

Publisher

American Association for the Advancement of Science (AAAS)

Reference44 articles.

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