Reversible spin storage in metal oxide—fullerene heterojunctions-Reference-Cited by-同舟云学术

Reversible spin storage in metal oxide—fullerene heterojunctions

Published:2020-03-20 Issue:12 Volume:6 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Moorsom T.¹^ORCID,Rogers M.¹^ORCID,Scivetti I.²^ORCID,Bandaru S.³,Teobaldi G.²³^ORCID,Valvidares M.⁴^ORCID,Flokstra M.⁵^ORCID,Lee S.⁵^ORCID,Stewart R.⁵,Prokscha T.⁶^ORCID,Gargiani P.⁴^ORCID,Alosaimi N.¹,Stefanou G.¹^ORCID,Ali M.¹,Al Ma’Mari F.¹⁷^ORCID,Burnell G.¹^ORCID,Hickey B. J.¹,Cespedes O.¹^ORCID

Affiliation:

1. School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, UK.

2. Stephenson Institute for Renewable Energy, Department of Chemistry, University of Liverpool, Liverpool L69 3BX, England.

3. Beijing Computational Science Research Centre, 100193 Beijing, China.

4. ALBA Synchrotron Light Source, E-08290 Barcelona, Spain.

5. School of Physics and Astronomy, SUPA, University of St Andrews, St Andrews KY16 9SS, UK.

6. Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, 5232 Villigen, Switzerland.

7. Department of Physics, Sultan Qaboos University, P.O. Box 36, 123 Muscat, Oman.

Abstract

Hybrid interfaces form a spin capacitor for the generation and storage of spin angular momentum via optical or electronic stimuli.

Funder

Engineering and Physical Sciences Research Council

Ministerio de Economía, Industria y Competitividad, Gobierno de España

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference67 articles.

1. Room temperature spin polarized injection in organic semiconductor

2. Observation of the spin Seebeck effect

3. Quantum Einstein-de Haas effect

4. Observation of the Spin Hall Effect in Semiconductors

5. Direct electronic measurement of the spin Hall effect

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