Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature
Author:
Affiliation:
1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
2. NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Abstract
Funder
Japan Society for the Promotion of Science
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
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