Enabling full-scale grain boundary mitigation in polycrystalline perovskite solids-Reference-Cited by-同舟云学术

Enabling full-scale grain boundary mitigation in polycrystalline perovskite solids

Published:2022-09-02 Issue:35 Volume:8 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Zhao Lichen¹²^ORCID,Tang Pengyi³⁴^ORCID,Luo Deying¹^ORCID,Dar M. Ibrahim⁵^ORCID,Eickemeyer Felix T.²^ORCID,Arora Neha⁵^ORCID,Hu Qin⁶⁷⁸^ORCID,Luo Jingshan²⁹^ORCID,Liu Yuhang²^ORCID,Zakeeruddin Shaik Mohammed²^ORCID,Hagfeldt Anders¹⁰^ORCID,Arbiol Jordi³¹¹^ORCID,Huang Wei¹²¹³^ORCID,Gong Qihuang¹¹⁴^ORCID,Russell Thomas P.⁶⁷^ORCID,Friend Richard H.⁵^ORCID,Grätzel Michael²^ORCID,Zhu Rui¹¹⁴^ORCID

Affiliation:

1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, China.

2. Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Station 6, CH-1015 Lausanne, Switzerland.

3. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Catalonia, Spain.

4. State Key Laboratory of Information Functional Materials, 2020 X-Lab, ShangHai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

5. Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK.

6. Polymer Science and Engineering Department, University of Massachusetts, Amherst, MA 01003, USA.

7. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

8. School of Microelectronics, University of Science and Technology of China, Hefei 230026, China.

9. Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Research Center, Nankai University, Tianjin 300350, China.

10. Laboratory of Photomolecular Science, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Station 6, CH-1015 Lausanne, Switzerland.

11. ICREA, Pg. Lluís Companys 23, Barcelona 08010, Catalonia, Spain.

12. Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China.

13. Shaanxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi’an 710072, China.

14. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China.

Abstract

There exists a considerable density of interaggregate grain boundaries (GBs) and intra-aggregate GBs in polycrystalline perovskites. Mitigation of intra-aggregate GBs is equally notable to that of interaggregate GBs as intra-aggregate GBs can also cause detrimental effects on the photovoltaic performances of perovskite solar cells (PSCs). Here, we demonstrate full-scale GB mitigation ranging from nanoscale intra-aggregate to submicron-scale interaggregate GBs, by modulating the crystallization kinetics using a judiciously designed brominated arylamine trimer. The optimized GB-mitigated perovskite films exhibit reduced nonradiative recombination, and their corresponding mesostructured PSCs show substantially enhanced device efficiency and long-term stability under illumination, humidity, or heat stress. The versatility of our strategy is also verified upon applying it to different categories of PSCs. Our discovery not only specifies a rarely addressed perspective concerning fundamental studies of perovskites at nanoscale but also opens a route to obtain high-quality solution-processed polycrystalline perovskites for high-performance optoelectronic devices.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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