Enabling full-scale grain boundary mitigation in polycrystalline perovskite solids

Author:

Zhao Lichen12ORCID,Tang Pengyi34ORCID,Luo Deying1ORCID,Dar M. Ibrahim5ORCID,Eickemeyer Felix T.2ORCID,Arora Neha5ORCID,Hu Qin678ORCID,Luo Jingshan29ORCID,Liu Yuhang2ORCID,Zakeeruddin Shaik Mohammed2ORCID,Hagfeldt Anders10ORCID,Arbiol Jordi311ORCID,Huang Wei1213ORCID,Gong Qihuang114ORCID,Russell Thomas P.67ORCID,Friend Richard H.5ORCID,Grätzel Michael2ORCID,Zhu Rui114ORCID

Affiliation:

1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, China.

2. Laboratory of Photonics and Interfaces, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Station 6, CH-1015 Lausanne, Switzerland.

3. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Catalonia, Spain.

4. State Key Laboratory of Information Functional Materials, 2020 X-Lab, ShangHai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

5. Cavendish Laboratory, Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK.

6. Polymer Science and Engineering Department, University of Massachusetts, Amherst, MA 01003, USA.

7. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

8. School of Microelectronics, University of Science and Technology of China, Hefei 230026, China.

9. Institute of Photoelectronic Thin Film Devices and Technology, Solar Energy Research Center, Nankai University, Tianjin 300350, China.

10. Laboratory of Photomolecular Science, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Station 6, CH-1015 Lausanne, Switzerland.

11. ICREA, Pg. Lluís Companys 23, Barcelona 08010, Catalonia, Spain.

12. Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China.

13. Shaanxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi’an 710072, China.

14. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China.

Abstract

There exists a considerable density of interaggregate grain boundaries (GBs) and intra-aggregate GBs in polycrystalline perovskites. Mitigation of intra-aggregate GBs is equally notable to that of interaggregate GBs as intra-aggregate GBs can also cause detrimental effects on the photovoltaic performances of perovskite solar cells (PSCs). Here, we demonstrate full-scale GB mitigation ranging from nanoscale intra-aggregate to submicron-scale interaggregate GBs, by modulating the crystallization kinetics using a judiciously designed brominated arylamine trimer. The optimized GB-mitigated perovskite films exhibit reduced nonradiative recombination, and their corresponding mesostructured PSCs show substantially enhanced device efficiency and long-term stability under illumination, humidity, or heat stress. The versatility of our strategy is also verified upon applying it to different categories of PSCs. Our discovery not only specifies a rarely addressed perspective concerning fundamental studies of perovskites at nanoscale but also opens a route to obtain high-quality solution-processed polycrystalline perovskites for high-performance optoelectronic devices.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3