Highly efficient modulation doping: A path toward superior organic thermoelectric devices

Author:

Wang Shu-Jen12ORCID,Panhans Michel34ORCID,Lashkov Ilia1ORCID,Kleemann Hans1ORCID,Caglieris Federico25ORCID,Becker-Koch David14ORCID,Vahland Jörn1ORCID,Guo Erjuan1ORCID,Huang Shiyu1,Krupskaya Yulia2,Vaynzof Yana14ORCID,Büchner Bernd2,Ortmann Frank34ORCID,Leo Karl1ORCID

Affiliation:

1. Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01069 Dresden, Germany.

2. Leibnitz Institute for Solid State and Materials Research, IFW, Helmholtzstraße 20, 01069 Dresden, Germany.

3. Technische Universität München, Department of Chemistry, Lichtenbergstr. 4, 85748 Garching b. München, Germany.

4. Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtz Str. 18, 01069 Dresden, Germany.

5. CNR-SPIN Institute, Corso F. M. Perrone 24, 16152 Genova, Italy.

Abstract

We investigate the charge and thermoelectric transport in modulation-doped large-area rubrene thin-film crystals with different crystal phases. We show that modulation doping allows achieving superior doping efficiencies even for high doping densities, when conventional bulk doping runs into the reserve regime. Modulation-doped orthorhombic rubrene achieves much improved thermoelectric power factors, exceeding 20 μW m −1 K −2 at 80°C. Theoretical studies give insight into the energy landscape of the heterostructures and its influence on qualitative trends of the Seebeck coefficient. Our results show that modulation doping together with high-mobility crystalline organic semiconductor films is a previosly unexplored strategy for achieving high-performance organic thermoelectrics.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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