Anomalous transport in high-mobility superconducting SrTiO 3 thin films

Author:

Yue Jin1ORCID,Ayino Yilikal2,Truttmann Tristan K.1ORCID,Gastiasoro Maria N.2ORCID,Persky Eylon3,Khanukov Alex3,Lee Dooyong1ORCID,Thoutam Laxman R.1,Kalisky Beena3ORCID,Fernandes Rafael M.2ORCID,Pribiag Vlad S.2ORCID,Jalan Bharat1ORCID

Affiliation:

1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA.

2. School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, USA.

3. Department of Physics and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan 5290002, Israel.

Abstract

The study of subtle effects on transport in semiconductors requires high-quality epitaxial structures with low defect density. Using hybrid molecular beam epitaxy (MBE), SrTiO 3 films with a low-temperature mobility exceeding 42,000 cm 2 V −1 s −1 at a low carrier density of 3 × 10 17 cm −3 were achieved. A sudden and sharp decrease in residual resistivity accompanied by an enhancement in the superconducting transition temperature were observed across the second Lifshitz transition where the third band becomes occupied, revealing dominant intraband scattering. These films further revealed an anomalous behavior in the Hall carrier density as a consequence of the antiferrodistortive (AFD) transition and the temperature dependence of the Hall scattering factor. Using hybrid MBE growth, phenomenological modeling, temperature-dependent transport measurements, and scanning superconducting quantum interference device imaging, we provide critical insights into the important role of inter- versus intraband scattering and of AFD domain walls on normal-state and superconducting properties of SrTiO 3 .

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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