Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors-Reference-Cited by-同舟云学术

Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors

Published:2017-03-03 Issue:3 Volume:3 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Fahad Hossain Mohammad¹²³,Shiraki Hiroshi¹²⁴,Amani Matin¹²³,Zhang Chuchu¹,Hebbar Vivek Srinivas¹^ORCID,Gao Wei¹²³,Ota Hiroki¹²³,Hettick Mark¹²³^ORCID,Kiriya Daisuke¹²³,Chen Yu-Ze⁵^ORCID,Chueh Yu-Lun⁵,Javey Ali¹²³

Affiliation:

1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.

2. Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.

3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

4. Murata Manufacturing Co. Ltd., Nagaokakyo, Kyoto 617-8555, Japan.

5. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.

Abstract

Multigas sensors on a chip with chemical-sensitive nanoscale silicon transistors.

Funder

National Science Foundation

Chevron

Murata Manufacturing Co. Ltd.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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