Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

Author:

Zhong Ding1ORCID,Seyler Kyle L.1,Linpeng Xiayu1,Cheng Ran2ORCID,Sivadas Nikhil2,Huang Bevin1,Schmidgall Emma1ORCID,Taniguchi Takashi3,Watanabe Kenji3ORCID,McGuire Michael A.4,Yao Wang5ORCID,Xiao Di2,Fu Kai-Mei C.16,Xu Xiaodong17

Affiliation:

1. Department of Physics, University of Washington, Seattle, WA 98195, USA.

2. Department of Physics, Carnegie Mellon University, Pittsburg, PA 15213, USA.

3. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

4. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.

5. Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China.

6. Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA.

7. Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, USA.

Abstract

A van der Waals heterostructure of monolayer WSe 2 and ferromagnetic CrI 3 enables exceptional control of valley pseudospin.

Funder

Basic Energy Sciences

Research Grants Council, University Grants Committee

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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