Polycrystalline CVD Diamond Films with High Electrical Mobility
Author:
Affiliation:
1. Crystallume, 125 Constitution Drive, Menlo Park, CA 94025
2. Lawrence Livermore National Laboratory, L-476, 7000 East Avenue, Livermore, CA 94550
3. Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
Reference20 articles.
1. AGER, J.W., SPATIALLY RESOLVED RAMAN STUDIES OF DIAMOND FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION, PHYSICAL REVIEW B 43: 6491 (1991).
2. COLLINS, A.T., DIAMOND ELECTRONIC DEVICES - A CRITICAL-APPRAISAL, SEMICONDUCTOR SCIENCE AND TECHNOLOGY 4: 605 (1989).
3. DRORY, M.D., FRACTURE-TOUGHNESS OF CHEMICALLY VAPOR-DEPOSITED DIAMOND, JOURNAL OF THE AMERICAN CERAMIC SOCIETY 74: 3148 (1991).
4. GEIS, M.W., HIGH-TEMPERATURE POINT-CONTACT TRANSISTORS AND SCHOTTKY DIODES FORMED ON SYNTHETIC BORON-DOPED DIAMOND, IEEE ELECTRON DEVICE LETTERS 8: 341 (1987).
5. GEIS, M. W., JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 6: 1953 (1988).
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