Laminar Growth of Ultrathin Metal Films on Metal Oxides: Co on Hydroxylated α-Al 2 O 3 (0001)-Reference-Cited by-同舟云学术

Laminar Growth of Ultrathin Metal Films on Metal Oxides: Co on Hydroxylated α-Al 2 O 3 (0001)

Published:2002-08-02 Issue:5582 Volume:297 Page:827-831
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Chambers S. A.¹,Droubay T.¹,Jennison D. R.²,Mattsson T. R.²

Affiliation:

1. Pacific Northwest National Laboratory, Post Office Box 999, MSK8–93, Richland, WA 99352, USA.

2. Sandia National Laboratories, Post Office Box 5800, Albuquerque, NM 87185–1415, USA.

Abstract

Metals deposited in vacuum on metal oxides such as alumina normally grow as three-dimensional clusters because of weak adatom-substrate interactions. This tendency hinders our ability to form interfaces of ultrathin, laminar metal films on oxides for use in microelectronics and other technologies where nanostructural control is desired. We present experimental and theoretical results showing that room temperature Co deposition on fully hydroxylated clean sapphire (α-Al 2 O 3 ) produces a surface chemical reaction that leads to laminar growth, despite a large mismatch in lattice constants. This process should be applicable to a wide range of metals and metal oxides.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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