An All-Silicon Passive Optical Diode

Author:

Fan Li12,Wang Jian12,Varghese Leo T.12,Shen Hao12,Niu Ben12,Xuan Yi12,Weiner Andrew M.12,Qi Minghao123

Affiliation:

1. Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.

2. School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA.

3. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China.

Abstract

A Passive Optical Diode Electrical diodes are at the core of microelectronics. The optical equivalent, however, has been difficult to realize owing to the time-reversal symmetry of Maxwell's equations that describe electromagnetic propagation. Usually, a control input in the form of a magnetic field is required that breaks that symmetry. Such inputs are not practical for optical integrated circuits. Fan et al. (p. 447 , published online 22 December) developed a silicon-based microresonator device that could control the asymmetric transmission of light through it. The passive optical diode was compatible with current complementary metal-oxide semiconductor processing technology and thus should be readily integrated into optoelectronic circuitry.

Funder

National Institutes of Health

Air Force Office of Scientific Research

Defense Threat Reduction Agency

National Science Foundation

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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