All-printed thin-film transistors from networks of liquid-exfoliated nanosheets

Author:

Kelly Adam G.1ORCID,Hallam Toby2ORCID,Backes Claudia1,Harvey Andrew1,Esmaeily Amir Sajad1ORCID,Godwin Ian1ORCID,Coelho João2ORCID,Nicolosi Valeria2,Lauth Jannika3ORCID,Kulkarni Aditya3ORCID,Kinge Sachin4ORCID,Siebbeles Laurens D. A.3,Duesberg Georg S.25,Coleman Jonathan N.1ORCID

Affiliation:

1. School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER), Trinity College Dublin, Dublin 2, Ireland.

2. School of Chemistry, CRANN and AMBER, Trinity College Dublin, Dublin 2, Ireland.

3. Chemical Engineering Department, Delft University of Technology, NL-2629 HZ Delft, Netherlands.

4. Materials Research & Development, Toyota Motor Europe, B-1930 Zaventem, Belgium.

5. Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr, München, Germany.

Abstract

Printing nanosheet-network transistors Two-dimensional (2D) materials such as graphene and metal chalcogenides such as tungsten diselenide (WSe2) are attractive for use in low-cost thin-film transistors (TFTs) because they have high charge-carrier mobility. Kelly et al. printed TFTs from networks of exfoliated dispersions of 2D materials with graphene contacts, WSe 2 as the semiconductor, and a boron nitride separator. Electrolytic gating with ionic liquids enabled higher operating currents than achieved with comparable organic TFTs. Science , this issue p. 69

Funder

European Commission

European Research Council

Science Foundation Ireland

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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