Observing the Quantization of Zero Mass Carriers in Graphene

Author:

Miller David L.1,Kubista Kevin D.1,Rutter Gregory M.2,Ruan Ming1,de Heer Walt A.1,First Phillip N.1,Stroscio Joseph A.2

Affiliation:

1. School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, USA.

2. Center for Nanoscale Science and Technology, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.

Abstract

Resolving Landau Levels in Graphene The charge carriers in a two-dimensional conductor, when placed in a magnetic field, can develop an additional set of quantized energy levels. These Landau levels correspond to the carriers now moving in cyclotron orbits. In graphene, which consists of single-atom-thick sheets of graphite, an unusual set of Landau levels with nonequal energy spacing can develop in graphene layers that have undergone symmetry breaking caused by rotation between adjacent layers. Miller et al. (p. 924 ) used scanning tunneling microscopy at cryogenic temperatures to map out Landau levels in graphene grown on silicon carbide with high energy and momentum resolution, including the characteristic level in graphene that can occur at zero energy.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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