Tunable excitons in bilayer graphene-Reference-Cited by-同舟云学术

Tunable excitons in bilayer graphene

Published:2017-11-17 Issue:6365 Volume:358 Page:907-910
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Ju Long¹²^ORCID,Wang Lei¹²^ORCID,Cao Ting³^ORCID,Taniguchi Takashi⁴,Watanabe Kenji⁴^ORCID,Louie Steven G.³⁵^ORCID,Rana Farhan⁶^ORCID,Park Jiwoong¹⁷,Hone James⁸^ORCID,Wang Feng³⁵⁹^ORCID,McEuen Paul L.¹²^ORCID

Affiliation:

1. Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA.

2. Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, USA.

3. Department of Physics, University of California, Berkeley, CA 94720, USA.

4. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

5. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

6. School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.

7. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853, USA.

8. Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA.

9. Kavli Energy NanoSciences Institute at the University of California, Berkeley, and the Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.

Abstract

Pairing up electrons and holes in bilayer graphene Excitons—bound pairs of electron and holes in solids—can be harnessed for optoelectronic applications. Being able to tune the exciton energy would bring functional flexibility to such devices. Although tunable excitons have been predicted to form in bilayer graphene, observing them experimentally has been difficult. Ju et al. used high-quality bilayer graphene samples sandwiched between layers of hexagonal boron nitride to observe excitons in this material. Exciton energy was tuned across a large range by controlling the gate voltages. Science , this issue p. 907

Funder

Air Force Office of Scientific Research

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference39 articles.

1. Direct observation of a widely tunable bandgap in bilayer graphene

2. Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

3. Asymmetry gap in the electronic band structure of bilayer graphene

4. Ab initiotheory of gate induced gaps in graphene bilayers

5. Gate-induced insulating state in bilayer graphene devices

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