Dependence of Upper Critical Field and Pairing Strength on Doping in Cuprates-Reference-Cited by-同舟云学术

Dependence of Upper Critical Field and Pairing Strength on Doping in Cuprates

Published:2003-01-03 Issue:5603 Volume:299 Page:86-89
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Wang Yayu¹,Ono S.²,Onose Y.³,Gu G.⁴,Ando Yoichi²,Tokura Y.³⁵,Uchida S.⁶,Ong N. P.¹

Affiliation:

1. Department of Physics, Princeton University, Princeton, NJ 08544, USA.

2. Central Research Institute of Electric Power Industry, Komae, Tokyo 201–8511, Japan.

3. Spin Superstructure Project, Japan Science and Technology, Tsukuba 305–8562, Japan.

4. Physics Department, Brookhaven National Laboratory, Upton, NY 11973, USA.

5. Department of Applied Physics,

6. School of Frontier Sciences, University of Tokyo, Tokyo 113–8656, Japan.

Abstract

We have determined the upper critical field H c2 as a function of hole concentration in bismuth-based cuprates by measuring the voltage induced by vortex flow in a driving temperature gradient (the Nernst effect), in magnetic fields up to 45 tesla. We found that H c2 decreased steeply as doping increased, in both single and bilayer cuprates. This relationship implies that the Cooper pairing potential displays a trend opposite to that of the superfluid density versus doping. The coherence length of the pairs ξ 0 closely tracks the gap measured by photoemission. We discuss implications for understanding the doping dependence of the critical temperature T c0 .

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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