Actinide Topological Insulator Materials with Strong Interaction

Author:

Zhang Xiao1,Zhang Haijun1,Wang Jing1,Felser Claudia2,Zhang Shou-Cheng1

Affiliation:

1. Department of Physics, Stanford University, Stanford, CA 94305, USA.

2. Institute for Inorganic and Analytical Chemistry, Johannes Gutenberg University of Mainz, D-55099 Mainz, Germany and Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.

Abstract

Interacting Topological Insulator Topological insulators (TIs) hold great promise as a setting for exotic fundamental phenomena, as well as for more practical applications such as quantum computing. This new state of matter has been discovered in materials such as Bi 2 Se 3 , where electrons' spins are correlated with their orbital motion, but interactions between the electrons themselves are negligible. For a TI to fulfill its potential, a material with interacting electrons is desirable. Zhang et al. (p. 1464 ) used density functional calculations to predict that strong interactions in actinide compounds such as AmN may drive a transition into a TI state, with a large insulating gap favorable for device applications.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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