Observation of Dirac Node Formation and Mass Acquisition in a Topological Crystalline Insulator

Author:

Okada Yoshinori12,Serbyn Maksym3,Lin Hsin4,Walkup Daniel1,Zhou Wenwen1,Dhital Chetan1,Neupane Madhab5,Xu Suyang5,Wang Yung Jui4,Sankar R.6,Chou Fangcheng6,Bansil Arun4,Hasan M. Zahid57,Wilson Stephen D.1,Fu Liang3,Madhavan Vidya1

Affiliation:

1. Department of Physics, Boston College, Chestnut Hill, MA 02467, USA.

2. World Premier International–Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.

3. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139,USA.

4. Department of Physics, Northeastern University, Boston, MA 02115, USA.

5. Joseph Henry Laboratory, Department of Physics, Princeton University, Princeton, NJ 08544, USA.

6. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan.

7. Princeton Center for Complex Materials, Princeton University, Princeton, NJ 08544, USA.

Abstract

Half-Massless Certain materials, such as topological crystalline insulators (TCIs), host robust surface states that have a Dirac (graphene-like) dispersion associated with massless carriers; the breaking of protective symmetry within such materials should cause the carriers to acquire mass. Okada et al. (p. 1496 , published online 29 August) used scanning tunneling microscopy to map out the energies of the electronic levels of the TCI Pb 1- x Sn x Se as a function of the strength of an external magnetic field. The massless Dirac fermions coexisted with massive ones, presumably as a consequence of a distortion of the crystalline structure affecting only one of the two mirror symmetries.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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