Ultrafast Phenomena in Semiconductor Devices-Reference-Cited by-同舟云学术

Ultrafast Phenomena in Semiconductor Devices

Published:1982-02-12 Issue:4534 Volume:215 Page:797-801
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Shank C. V.¹,Auston D. H.²

Affiliation:

1. Head of the Quantum Physics and Electronics Department, Bell Laboratories, Holmdel, New Jersey 07733

2. Member of the technical staff at Bell Laboratories, Murray Hill, New Jersey 07674

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference21 articles.

1. ANACKER, W, JOSEPHSON COMPUTER-TECHNOLOGY - IBM RESEARCH-PROJECT, IBM JOURNAL OF RESEARCH AND DEVELOPMENT 24: 107 (1980).

2. AUSTON, D.H., PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS, APPLIED PHYSICS LETTERS 37: 371 (1980).

3. DINGLE, R, ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES, APPLIED PHYSICS LETTERS 33: 665 (1978).

4. FORK, R.L., GENERATION OF OPTICAL PULSES SHORTER THAN 0.1 PSEC BY COLLIDING PULSE MODE-LOCKING, APPLIED PHYSICS LETTERS 38: 671 (1981).

5. FRANZ, W, EINFLUSS EINES ELEKTRISCHEN FELDES AUF EINE OPTISCHE ABSORPTIONSKANTE, ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE 13: 484 (1958).

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