Atomic-scale ion transistor with ultrahigh diffusivity

Author:

Xue Yahui1ORCID,Xia Yang1ORCID,Yang Sui1ORCID,Alsaid Yousif1ORCID,Fong King Yan1ORCID,Wang Yuan1ORCID,Zhang Xiang2ORCID

Affiliation:

1. Nanoscale Science and Engineering Center, University of California, Berkeley, CA, USA.

2. Faculty of Science and Faculty of Engineering, University of Hong Kong, Hong Kong, China.

Abstract

Gated ion flow in graphene oxide membranes Cells are adept at fast, gated ion flow through tailored channels, which is key to many biological processes. Xue et al. developed ion transistors from reduced graphene oxide membranes and observed a field-enhanced diffusivity of the ions (see the Perspective by Hinds). By applying electrical gating, the average surface potential on the graphene layer could be controlled, thus altering the energy barrier for ion intercalation into the channel and leading to very high diffusion rates. The authors observed selective ion transport two orders of magnitude faster than the ion diffusion in bulk water. Science , this issue p. 501 ; see also p. 459

Funder

King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research award

Ernest S. Kuh Endowed Chair Professorship

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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