Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy

Author:

Tenne D. A.12345,Bruchhausen A.12345,Lanzillotti-Kimura N. D.12345,Fainstein A.12345,Katiyar R. S.12345,Cantarero A.12345,Soukiassian A.12345,Vaithyanathan V.12345,Haeni J. H.12345,Tian W.12345,Schlom D. G.12345,Choi K. J.12345,Kim D. M.12345,Eom C. B.12345,Sun H. P.12345,Pan X. Q.12345,Li Y. L.12345,Chen L. Q.12345,Jia Q. X.12345,Nakhmanson S. M.12345,Rabe K. M.12345,Xi X. X.12345

Affiliation:

1. Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA.

2. Centro Atómico Bariloche y Instituto Balseiro, Comisión Nacional de Energía Atómica, 8400 San Carlos de Bariloche, Argentina.

3. Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00931–3343, USA.

4. Materials Science Institute, University of Valencia, Post Office Box 22085, E-46071 Valencia, Spain.

5. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.

Abstract

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature ( T c ) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO 3 layers in BaTiO 3 /SrTiO 3 superlattices are not only ferroelectric (with T c as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO 3 layers adjacent to them. T c was tuned by ∼500 kelvin by varying the thicknesses of the BaTiO 3 and SrTiO 3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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