Super-tetragonal Sr 4 Al 2 O 7 as a sacrificial layer for high-integrity freestanding oxide membranes-Reference-Cited by-同舟云学术

Super-tetragonal Sr ₄ Al ₂ O ₇ as a sacrificial layer for high-integrity freestanding oxide membranes

Published:2024-01-26 Issue:6681 Volume:383 Page:388-394
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Zhang Jinfeng¹^ORCID,Lin Ting²^ORCID,Wang Ao¹^ORCID,Wang Xiaochao³^ORCID,He Qingyu⁴,Ye Huan¹^ORCID,Lu Jingdi¹,Wang Qing¹,Liang Zhengguo¹,Jin Feng¹^ORCID,Chen Shengru²^ORCID,Fan Minghui¹^ORCID,Guo Er-Jia²^ORCID,Zhang Qinghua²^ORCID,Gu Lin⁵^ORCID,Luo Zhenlin⁴^ORCID,Si Liang³⁶^ORCID,Wu Wenbin¹⁷⁸^ORCID,Wang Lingfei¹^ORCID

Affiliation:

1. Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China.

2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

3. School of Physics, Northwest University, Xi’an 710127, China.

4. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China.

5. Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.

6. Institut für Festkörperphysik, TU Wien, 1040 Vienna, Austria.

7. Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.

8. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.

Abstract

Identifying a suitable water-soluble sacrificial layer is crucial to fabricating large-scale freestanding oxide membranes, which offer attractive functionalities and integrations with advanced semiconductor technologies. Here, we introduce a water-soluble sacrificial layer, “super-tetragonal” Sr 4 Al 2 O 7 (SAO T ). The low-symmetric crystal structure enables a superior capability to sustain epitaxial strain, allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO 3 /SAO T heterostructures effectively restrain crack formation during the water release of freestanding oxide membranes. For a variety of nonferroelectric oxide membranes, the crack-free areas can span up to a millimeter in scale. This compelling feature, combined with the inherent high water solubility, makes SAO T a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative device applications.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Link

https://www.science.org/doi/pdf/10.1126/science.adi6620

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