Tunable Electrical Conductivity in Metal-Organic Framework Thin-Film Devices-Reference-Cited by-同舟云学术

Tunable Electrical Conductivity in Metal-Organic Framework Thin-Film Devices

Published:2014-01-03 Issue:6166 Volume:343 Page:66-69
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Talin A. Alec¹²,Centrone Andrea²³,Ford Alexandra C.¹,Foster Michael E.¹,Stavila Vitalie¹,Haney Paul²,Kinney R. Adam²³,Szalai Veronika²,El Gabaly Farid¹,Yoon Heayoung P.²³,Léonard François¹,Allendorf Mark D.¹

Affiliation:

1. Sandia National Laboratories, Livermore, CA 94551, USA.

2. Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.

3. Maryland Nanocenter, University of Maryland, College Park, MD 20742, USA.

Abstract

Guests for Conductors Thin films of metal-organic framework (MOF) compounds are generally poor conductors because the linking organic groups are usually insulators with little π-orbital conjugation. Talin et al. (p. 66 , published online 5 December) show that infiltrating films of the copper-based MOF HKUST-1 with the conjugated organic molecule 7,7,8,8-tetracyanoquinododimethane created an air-stable material with conductivities as high as 7 siemens per meter.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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