Fractional Quantum Hall Effect in Organic Molecular Semiconductors-Reference-Cited by-同舟云学术

Fractional Quantum Hall Effect in Organic Molecular Semiconductors

Published:2000-06-30 Issue:5475 Volume:288 Page:2338-2340
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Schön J. H.¹,Kloc Ch.¹,Batlogg B.¹

Affiliation:

1. Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, NJ 07974, USA.

Abstract

High-quality crystals of the organic molecular semiconductors tetracene and pentacene were used to prepare metal-insulator-semiconductor (MIS) structures exhibiting hole and electron mobilities exceeding 10 4 square centimeters per volt per second. The carrier concentration in the channel region of these ambipolar field-effect devices was controlled by the applied gate voltage. Well-defined Shubnikov–de Haas oscillations and quantized Hall plateaus were observed for two-dimensional carrier densities in the range of 10 11 per square centimeter. Fractional quantum Hall states were observed in tetracene crystals at temperatures as high as ∼2 kelvin.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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