Semiconductor double quantum dot micromaser-Reference-Cited by-同舟云学术

Semiconductor double quantum dot micromaser

Published:2015-01-16 Issue:6219 Volume:347 Page:285-287
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Liu Y.-Y.¹,Stehlik J.¹,Eichler C.¹,Gullans M. J.²,Taylor J. M.²³,Petta J. R.¹⁴

Affiliation:

1. Department of Physics, Princeton University, Princeton, NJ 08544, USA.

2. Joint Quantum Institute, University of Maryland–National Institute of Standards and Technology, College Park, MD 20742, USA.

3. Joint Center for Quantum Information and Computer Science, University of Maryland and NIST, College Park, MD 20742, USA.

4. Department of Physics, University of California, Santa Barbara, CA 93106, USA.

Abstract

Tunnel through and emit coherently The generation of coherent light (lasers and masers) forms the basis of a large optics industry. Liu et al. demonstrate a type of laser that is driven by the tunneling of single electrons in semiconductor double-quantum dots. Distinct from other existing semiconductor lasers, the emission mechanism is driven by tunneling of single charges between discrete energy levels that are electrically tunable. The ability to tune the levels by single-electron charging would allow their laser (or maser) to be turned on and off rapidly. Science , this issue p. 285

Funder

National Science Foundation

Army Research Office

Packard Foundation

Defense Advanced Research Projects Agency QuEST

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference38 articles.

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2. A. E. Siegman Lasers . (University Science Books Mill Valley CA 1986).