Photonic doping of epsilon-near-zero media

Author:

Liberal Iñigo1ORCID,Mahmoud Ahmed M.12,Li Yue13ORCID,Edwards Brian1ORCID,Engheta Nader1ORCID

Affiliation:

1. Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.

2. Department of Physics, The American University in Cairo, Cairo, Egypt.

3. Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.

Abstract

Doped photonics Doping semiconductor materials with impurity atoms enables control of the optoelectronic properties that enhance functionality. Liberal et al. describe numerically and experimentally an analogous doping effect for a group of photonic materials. They introduced a dielectric into an otherwise nonmagnetic material, which produced a magnetic response. The generality of the method should allow the design of photonic materials with enhanced and controlled electromagnetic response. Science , this issue p. 1058

Funder

Office of Naval Research

Air Force Office of Scientific Research

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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